專任教師合聘教師兼任教師
職稱: 特聘教授 系所成員: 專任教師
姓名: 洪銘輝
Minghwei Hong
資歷: 1980 美國加州大學柏克萊分校 博士
個人網址: http://web.phys.ntu.edu.tw/mhong/ 房號: R701
E-Mail(1): 電話(1): (02) 3366-5193
E-Mail(2): 電話(2):
2011- 至今 國立台灣大學應用物理研究所暨物理學系 教授
2003-2011 國立清華大學材料系 教授
2009-2010 國立清華大學 奈微與材料科技中心 主任
1999-2003 美國 貝爾實驗室卓越研究員
1981-1999 美國 貝爾實驗室研究員
1980-1981 美國 加州大學Lawrence Berkeley Laboratory研究員
1973-1975 中華民國海軍少尉預備軍官
2016-present Nano Device Laboratory (NDL), 合聘特聘研究員.
2011-present台灣大學特聘教授.
2009-2011 國立清華大學材料系 清華講座教授
2003-2009 台積電講座教授
1999 Distinguished Technical Staff (DMTS) Award for sustained research achievements by Bell Laboratories, Lucent Technologies. 貝爾實驗室特聘研究員(The citation reads: “You are being honored for development of a novel oxide, Ga2O3(Gd2O3), to effectively passivate GaAs having a low interface state density range. You have used this thermodynamically and photo-chemically stable oxide to demonstrate the formation of inversion layers in both n- and p-type GaAs, which have eluded scientists and engineers around the world for more than three decades. You demonstrated the world’s first enhancement- and depletion-mode GaAs MOSFETs with stable high current densities without hysteresis. This may have applications (both analog and digital) in high speed electronic components and systems. Your work in material science has continued to keep Bell Labs – Lucent Technologies at the forefront in science and technology.”)
Fellow, American Physical Society (The citation reads: “For pioneering in III-V semiconductor metal oxide semiconductor field effect transistors including the landmark discovery of high dielectric constant oxide films on GaAs surface with low interface states and unpinned Fermi level and the first demonstration of inversion-channel GaAs MOSFET, timely for science and technology beyond Si CMOS. ”)
Fellow, IEEE (Institute of Electrical and Electronics Engineers, Inc.) (The citation reads: “for contributions to III-V semiconductor MOSFET transistors”)
Fellow, Physical Society of Republic of China, Taiwan (The citation reads: “藉由新穎奈米磊晶,掌控氧化物與Ⅲ-Ⅴ族半導體的介面,奠定下世代元件科學根基,貢獻卓越。”)
Web of Science Total citations: 10,200+, Hirsch Citation Index: 54; Google Scholar Total citations: 12,900+, H index: 57, with 5 publications being cited 300+ and 28 publications being cited 100+
705th among the ISI's 1120 Most Cited Physicists (1981-1997) ranked by total citations in physics, astrophysics, materials science, chemical physics, and the related fields. (http://pcb4122.univ-lemans.fr/1120physiciens.html)
Professor Hong has worked in different research topics, from superconductivity, magnetism, semiconductor lasers, to advanced electronic devices. In 1994, he and his colleagues at Bell Labs discovered a novel oxide of Ga2O3(Gd2O3), which gives the oxide-GaAs hetero-structure a low interfacial density of states in mid-range of 1011 cm-2 eV-1, thus solving a problem which has puzzled researchers for the last 35 years. This has led to the first demonstration of inversion-channel GaAs/InGaAs MOSFETs, the Holy Grail in compound semiconductor electronics.

From 2003 to now, he and Professor J. Raynien Kwo, and their research groups have made landmark contributions to achieve very low interfacial densities of states, very low electrical current leakage, high-temperature (900oC) stability of the high k/III-V (and Ge) MOS, surface Fermi level unpinning mechanism, sub-nm EOT in the high k’s in III-V and Ge, among many other critical properties, essential for the technology beyond 7-5 nm node CMOS. Moreover, they have fabricated self-aligned inversion- channel InGaAs MOSFETs with world-record high drain currents and transconductances.

2015
.Achieving record high extrinsic drain current >1.8 mA/μm and transconductance >0.95 mS/μm in 1m in self-aligned inversion-channel In0.53Ga0.47As metal-oxide-semiconductor field-effect transistors with in-situ deposited ALD-Al2O3 as gate dielectrics
.Self-aligned inversion-channel n-InGaAs, p-GaSb, and p-Ge MOSFETs with a common high k gate dielectric using a CMOS compatible process
.Single-crystal Y2O3 epitaxially on GaAs(001) and (111) using atomic layer deposition with extremely small frequency dispersion at accumulation in the CV curves and interfacial trap density in 2-4 x 1011 cm-2eV-1 using conductance method
2014
.Greatly improved interfacial passivation of in-situ high dielectric deposition on freshly grown molecule beam epitaxy Ge epitaxial layer on Ge(100)
.Observation of Strongly Enhanced Inverse Spin Hall Voltage in Fe3Si/GaAs Structures
2013
.Achieving record high drain current >1.5 mA/μm and transconductance >1.0 mS/μm in 1μm gate length self-aligned inversion-channel In0.53Ga0.47As metal-oxide-semiconductor field-effect transistors with in-situ deposited ALD-HfO2 as gate dielectrics
.Effectively passivating GaSb with UHV-deposited and ALD-Y2O3, achieving very low interfacial trap densities and record high drain currents in self-aligned inversion-channel GaSb MOSFETs
2012
.Both ALD- and MBE-HfO2 based high-κ dielectrics on In0.53Ga0.47As and In0.2Ga0.8As with low Dit’s, excellent thermodynamic stability, and outstanding oxide scalability, thus breaking the myth that tetravalent oxides such as HfO2 could not give an excellent high-κ/InGaAs interface
.First to probe atom-to-atom interactions for atomic layer deposition of trimethylaluminum/H2O on Ga-rich GaAs(001)- 4x6 and As-rich GaAs(001)-2x4 surfaces using in-situ synchrotron-radiation photoemission
2011
.Achieving record high drain current >1.5 mA/μm in self-aligned inversion-channel In0.53Ga0.47As metal-oxide-semiconductor field-effect transistors with in-situ deposited Al2O3/Y2O3as gate dielectrics
.Direct determination of flat-band voltage for metal/high oxide/semiconductor heterointerfaces by electric-field- induced second-harmonic generation
Achieving a record-low interfacial density of states with a flat distribution in Ga2O3(Gd2O3) directly deposited on GeAtomic-scale determination of band offsets at Gd2O3/GaAs (100) hetero-interface using scanning tunneling spectroscopy type
2010
.Attainment of low interfacial trap density absent of a large mid-gap peak in In0.2Ga0.8As by Ga2O3(Gd2O3) passivation
.In-situ ALD Al2O3 on GaAs – achieving more symmetrical CVs, unparalleled by comparing with other ALD approaches, which give good CVs for p-type, but poor for n-type
.In-situ synchrotron photoemission studies on high k’s on GaAs and Ge in attaining detailed interfacial atomic/ chemical bonding
.Effective reduction of interfacial traps in Al2O3/GaAs (001) gate stacks using surface engineering and thermal annealing
2009
.Achieving drain current enhancement and negligible current collapse in GaN metal-oxide-semiconductor field-effect-transistor with aid of high-quality ALD-oxides/GaN interface.
.Achieving nanometer-thick 0.5 nm CET single-crystal hexagonal Gd2O3 on GaN with exceptional high-temperature thermal stability (1100 oC) for advanced complementary metal-oxide-semiconductor technology
.Achieving nanometer-thick 0.6 nm CET amorphous/single-crystal Ga2O3(Gd2O3) on InGaAs with exceptional high-temperature thermal stability (900oC) for advanced complementary metal-oxide-semiconductor technology
.Achieving Ga2O3(Gd2O3) on Ge without interfacial layers and also a low EOT of 0.6 nm
2008
.First to achieve an EOT of 1.0 nm in both MBE and ALD oxide deposited on InGaAs
.Achieving low interfacial trap density in atomic layer deposited (ALD) Al2O3 on In0.53Ga0.47As
.Single crystal GaN on Si with nm-thick single crystal Sc2O3 and Al2O3 as a template
.UHV high k dielectrics of Ga2O3(Gd2O3), HfO2, and Y2O3 on Ge without interfacial layers – achieving excellent electrical properties
2007
.First to demonstrate a self-aligned inversion-channel Ga2O3(Gd2O3)/InGaAs MOSFET with world-record device performance in terms of drain currents of >1mA/μm and transconductance of > 0.7 mS/μm in a 1μm gate length device
.First to achieve true inversion-channel GaN metal-oxide-semiconductor field-effect transistor with atomic-layer- deposited Al2O3 as gate dielectric
.First self-aligned inversion n-channel InGaAs/GaAs metal-oxide-semiconductor field-effect-transistors with TiN gate and Ga2O3(Gd2O3) dielectric
.First to use atomic-layer-deposited (ALD) HfO2 on In0.53Ga0.47As: passivation and energy-band parameters
2006
.Cubic HfO2 doped with Y2O3 epitaxial films on GaAs (001) of enhanced dielectric constant of 34
.First to determine energy-band parameters of atomic-layer-deposition-Al2O3/InGaAs heterostructures
2005
.First to understand the mechanism of Fermi-level unpinning in ALD grown Al2O3 on InGaAs
.A novel approach of using a molecular beam epitaxy grown template for subsequent atomic layer deposition of high dielectrics on Si without any interfacial layer to achieve a very low EOT
.Growth of perfected nano-thick single crystal oxide films (gamma Al2O3 and Sc2O3) on Si
2004
.First to achieve high-temperature thermodynamic stability and low interfacial density of states in Ga2O3 (Gd2O3)/GaAs interface – a must for self-aligned inversion-channel InGaAs MOSFET’s
.First to grow all single-crystal heterostructures in GaN/Rare Earth Oxides (Gd2O3, Y2O3)/GaN with sharp interfaces and a low interfacial density of states in each interface
2003
.Fabrication of GaAs MOSFET with oxide gate dielectric grown by atomic layer deposition (ALD)
2002
.First to grow a all single crystal heterostructure in GaN/Rare Earth Oxides (Gd2O3, Y2O3)/GaN with sharp interfaces and a low interfacial density of states in each interface (opening up a possibility of building three-dimensional integrate circuits)
.Direct atomic structure determination of epitaxially grown films: Gd2O3 on GaAs (100)
2001
.First to achieve a chemically abrupt, atomically sharp oxide/Si interface with a low interracial density of states using an e-beam/UHV (MBE) approach (a very significant accomplishment in microelectronics in replacing SiO2 with high-k gate dielectrics)
2000
.First to demonstrate a GaAs CMOS inverter
.First to grow hcp single crystal rare earth oxides (a high temperature phase) on GaN with a low interfacial density of states
First to grow a new fcc Gd2O3 phase on GaAs
NTU Academic Hub

Web of Science Total citations: 10,200+, Hirsch Citation Index: 54; Google Scholar Total citations: 12,900+, H index: 57, with 5 publications being cited 300+ and 28 publications being cited 100+

Hong's updated publications in Google Scholar

1.“Self-aligned inversion-channel n-InGaAs, p-GaSb, and p-Ge MOSFETs with a common high j gate dielectric using a CMOS compatible process”, C.H. Fu, Y.H. Lin, W.C. Lee, T.D. Lin, R.L. Chu, L.K. Chu, P. Chang, M.H. Chen, W.J. Hsueh, S.H. Chen, G.J. Brown, J.I. Chyi, J. Kwo, and M. Hong, Microelectronic Engineering, 147, Pages 330–334 (2015). 1 November 2015.

2.“Single-crystal atomic layer deposited Y2O3 on GaAs(001) - growth, structural, and electrical characterization”, S.Y. Wu, K.H. Chen, Y.H. Lin, C.K. Cheng, C.H. Hsu, J. Kwo, M. Hong, Microelectronic Engineering, 147, 310–313 (2015). 1 November 2015

3.“Reconstruction at the interface of 1 cycle of tri[methylaluminum] and water on GaAs(111)A-2x2 from atomic layer deposition”, T. H. Chiang, Y. T. Fanchiang, R. L. Chu, T. W. Pi, G. K. Wertheim, J. Kwo, and M. Hong, to be submitted to APEx, June, 2015

4.“Interference of coherent acoustic phonons excited below exciton resonance in a c-plane ZnO epi-film on oxide-buffered Si(111)”, J. H. Lin, W. R. Liu, M. Hong, J. Kwo, C. H. Hsu, and W. F. Hsieh, submitted to Optics Letters, May 2015.

5.“Strongly enhanced spin current in topological insulator/ferromagnetic metal heterostructures by spin pumping”, C. N. Wu, Y. H. Lin, Y. T. Fanchiang, H. Y. Hung, H. Y. Lin, P. H. Lin, J. G. Lin, S. F. Lee, M. Hong, and J. Kwo, Journal of Applied Physics 117, 17D148 (2015).

6.“In-situ atomic layer deposition of tri-methylaluminum and water on pristine single-crystal (In)GaAs surfaces: electronic and electric structures”, T. W. Pi, Y. H. Lin, Y. T. Fanchiang, T. H. Chiang, C. H. Wei, Y. C. Lin, G. K. Wertheim, J. Kwo, and M Hong, Nanotechnology 26 164001 (2015). Online publication April 1, 2015. doi:10.1088/0957-4484/26/16/164001

7.“Passivation of GaSb using molecular beam epitaxy Y2O3 to achieve low interfacial trap density and high-performance self-aligned inversion-channel p-metal-oxide-semiconductor field-effect-transistors”, R. L. Chu (朱瑞霖), T. H. Chiang (江宗鴻), W. J. Hsueh (薛惟仁), K. H. Chen (陳冠雄), K. Y. Lin (林耕雍), G. J. Brown, J. I. Chyi (綦振瀛), J. Kwo (郭瑞年), and M. Hong (洪銘輝) Appl. Phys. Lett. 105, 182106 (2014). November 3, 2014.

8. “Observation of Strongly Enhanced Inverse Spin Hall Voltage in Fe3Si/GaAs Structures”, H. Y. Hung, T. H. Chiang, B. Z. Syu, Y. T. Fanchiang, J. G. Lin, S. F. Lee, M. Hong, and J. Kwo, Appl. Phys. Lett. 105, 152413 (2014). October 13, 2014

9.“Single crystal Gd2O3 epitaxially on GaAs(111)A”, Tsung-Hung Chiang, Shao-Yun Wu, Tsung-Shiew Huang, Chia-Hung Hsu, J. Raynien Kwo, and Minghwei Hong, CrystEngComm, 16, 8457-8462 (2014). September 28 issue 36 DOI: 10.1039/C4CE00734D 2014

10. “III-V Compound Semiconductor Transistors – From Planar to Nanowire Structures”, Heike Riel*, Lars-Erik Wernersson, Minghwei Hong, Jesus A. del Alamo, MRS Bulletin 39 668-677 August 2014.

11. “Greatly improved interfacial passivation of in-situ high dielectric deposition on freshly grown molecule beam epitaxy Ge epitaxial layer on Ge(100)”, R. L. Chu (朱瑞霖), Y. C. Liu (劉有騏), W. C. Lee (李威縉), T. D. Lin (林宗達), M. L. Huang (黃懋霖), T. W. Pi (皮敦文), J. Kwo (郭瑞年), and M. Hong (洪銘輝), Appl. Phys. Lett. 104, 202102 (2014); doi: 10.1063/1.4879022

12.“High /InGaAs for ultimate CMOS – interfacial passivation, low ohmic contacts, and device performance (Invited)”, W. H. Chang, T. D. Lin, M. H. Liao, T. W. Pi, J. Kwo, and M. Hong, ECS Transactions, 61(2), 113-124 (2014).

13.“Semiconductor-insulator Interfaces, High κ Dielectrics on (In)GaAs”, Standard Article Wiley Encyclopedia of Electrical and Electronics Engineering, T.W. Pi, T.D. Lin, W.H. Chang, Y.C. Chang, M. Hong and J. Kwo, Published Online: 25 April 2014, ISBN: 9780471346081 DOI: 10.1002/047134608X.W3226.pub2

14.“Synchrotron radiation photoemission study of interfacial electronic structure of HfO2 on In0.53Ga0.47As(001)-4x2 from atomic layer deposition”, T. W. Pi, T. D. Lin, H. Y. Lin, Y. C. Chang, G. K. Wertheim, J. Kwo, and M. Hong, Appl. Phys. Lett. 104, 042904 (2014).

15.“High-performance self-aligned inversion-channel In0.53Ga0.47As metal-oxide-semiconductor field-effect-transistors by in-situ atomic-layer-deposited HfO2”, T. D. Lin (林宗達), W. H. Chang (張文馨), R. L. Chu (朱瑞霖), Y. C. Chang (張耀中), Y. H. Chang (張宇行), M. Y. Lee (李美儀), P. F. Hong (洪鵬飛), Min-Cheng Chen (陳旻政), J. Kwo (郭瑞年), and M. Hong (洪銘輝), Appl. Phys. Lett. 103, 253509 (2013).

16.“Surface Passivation of GaSb(100) Using Molecular Beam Epitaxy of Y2O3 and Atomic Layer Deposition of Al2O3: A Comparative Study”, R.-L. Chu, W.-J. Hsueh, T.-H. Chiang, W.-C. Lee, H.-Y. Lin, T.-D. Lin, G. J. Brown, J.-I. Chyi, T.-S. Huang, T.-W. Pi, J. R. Kwo, and M. Hong, Appl. Phys. Express 6 121201 (2013).

17.“Surface atoms core-level shifts in single crystal GaAs surfaces: Interactions with trimethylaluminum and water prepared by atomic layer deposition”, T.W. Pi, H.Y. Lin, T.H. Chiang, Y.T. Liu, Y.C. Chang, T.D. Lin, G.K. Wertheim, J. Kwo, and M. Hong, Applied Surface Science 284, 601-610 (2013). [The article has been downloaded or viewed 321 times since publication (measured through 30 April, 2014).]

18.“Interfacial electronic structure of trimethyl-aluminum and water on an In0.20Ga0.80As(001)-4x2 surface: A high-resolution core-level photoemission study”, T. W. Pi (皮敦文), H. Y. Lin (林孝于) T. H. Chiang (江宗鴻), Y. T. Liu (劉雅婷), G. K. Wertheim, J. Kwo (郭瑞年), and M. Hong (洪銘輝), J. Appl. Phys. 113, 203703 (2013).

19.“Detection of inverse spin Hall effect in epitaxial ferromagnetic Fe3Si films with normal metals Au and Pt”, H. Y. Hung, G. Y. Luo, Y. C. Chiu, P. Chang, W. C. Lee, J. G. Lin, S. F. Lee, M. Hong, and J. Kwo, J. Appl. Phys. 113, 17C507 (2013).

20.“Ferromagnetism in cluster free, transition metal doped high k dilute magnetic oxides: Films and nanocrystals”, C. N. Wu, T. S. Wu, S. Y. Huang, W. C. Lee, Y. H. Chang, Y. L. Soo, M. Hong, and J. Kwo, J. Appl. Phys. 113, 17C309 (2013).

21.“Atom-to-atom interactions for atomic layer deposition of trimethylaluminum on Ga-rich GaAs(001)-4x6 and As-rich GaAs(001)-2x4 surfaces: A synchrotron-radiation photoemission study”, T.-W. Pi, H.-Y. Lin, Y.-T. Liu, T.-D. Lin, G. K. Wertheim, J. Kwo and M. Hong, Nanoscale Research Letters 8, 169 (2013).

22.“Inversion-channel GaAs(100) metal-oxide-semiconductor field-effect-transistors using molecular beam deposited Al2O3 as a gate dielectric on different reconstructed surfaces”, Y. C. Chang, W. H. Chang, C. Merckling, J. Kwo, and M. Hong, Appl. Phys. Lett. 102, 093506 (2013).

23.“Phase transformation of molecular beam epitaxy-grown nanometer thick Gd2O3 and Y2O3 on GaN”, W. H. Chang, S. Y. Wu, C. H. Lee, T. Y. Lai, Y. J. Lee, P. Chang, C. H. Hsu, T. S. Huang, J. R. Kwo, and M. Hong, ACS Applied Materials & Interfaces 5, 1436 (2013).

24.“Vertical-cavity and randomly scattered lasing from different thicknesses of epitaxial ZnO films grown on Y2O3-buffered Si (111)”, C. C. Kuo, W.-R. Liu, B. H. Lin, W. F. Hsieh, C.-H. Hsu, W. C. Lee, M. Hong, and J. Kwo, Optics Express 21, 1857 (2013).

25.“Growth mechanism of atomic layer deposited Al2O3 on GaAs(001)-4x6 surface with trimethylaluminum and water as precursors”, M. L. Huang, Y. H. Chang, T. D. Lin, S. Y. Lin, Y. T. Liu, T. W. Pi, M. Hong, and J. Kwo, Appl. Phys. Lett. 101, 212101 (2012) doi: 10.1063/1.4767129.

26.“Effective Passivation of In0.2Ga0.8As by HfO2 Surpassing Al2O3 via in-situ Atomic Layer Deposition”, Y. H. Chang, C. A. Lin, Y. T. Liu, T. H. Chiang, H. Y. Lin, M. L. Huang, T. D. Lin, T. W. Pi, J. Kwo, and M. Hong, Appl. Phys. Lett. 101, 172104 (2012).

27.“Room temperature ferromagnetic behavior in cluster free, Co doped Y2O3 dilute magnetic oxide films”, C. N. Wu, S. Y. Huang, W. C. Lee, Y. H. Chang, T. S. Wu, Y. L. Soo, M. Hong, and J. Kwo, Appl. Phys. Lett. 101, 162403 (2012).

28.“Correlation Between Oxygen Vacancies and Magnetism in Mn-doped Y2O3 Nanocrystals Investigated by Defect Engineering Techniques”, T. S. Wu , Y. C. Chen , Y. F. Shiu , H. J. Peng , S. L. Chang , H. Y. Lee , P. P. Chu , C. W. Hsu , L.J. Chou , C.W. Pao , J.F. Lee, J. Kwo , M. Hong, and Y. L. Soo, Appl. Phys. Lett. 101, 022408 (2012) DOI: 10.1063/1.4732094.

29.“Metal Oxide Semiconductor Device Studies of Molecular-Beam-Deposited Al2O3/InP Heterostructures with Various Surface Orientations (001), (110), and (111)”, L.-K. Chu, C. Merckling, J. Dekoster, J. R. Kwo, M. Hong, M. Caymax, and M. Heyns, Applied Physics Express 5, 061202 DOI: 10.1143/APEX.5.061202 (2012).

30.“Surface-atom core-level shift in GaAs(111)A-2x2”, T. W. Pi, B. R. Chen, M. L. Huang, T. H. Chiang, G. K. Wertheim, M. Hong, and J. Kwo, J. Phys. Soc. Jpn. 81, 064603 DOI: 10.1143/JPSJ.81.064603 (2012).

31.“Realization of high-quality HfO2 on In0.53Ga0.47As by in-situ atomic-layer-deposition”, T. D. Lin (林宗達), Y. H. Chang (張宇行), C. A. Lin (林俊安), M. L. Huang (黃懋霖), W. C. Lee (李威縉), J. Kwo (郭瑞年), and M. Hong (洪銘輝), Appl. Phys. Lett. 100, 172110 DOI: 10.1063/1.4706261 (2012)

32.“Optimization of ohmic metal contacts for advanced GaAs-based CMOS device”, W. H. Chang, T. H. Chiang, T. D. Lin, Y. H. Chen, K. H. Wu, T. S. Huang, M. Hong, and J. Kwo, J. Vac. Sci. Technol. B 30, 02B123 DOI: 10.1116/1.3687418 (2012).

33.“InAs MOS devices passivated with MBE-grown Gd2O3 dielectrics”, C. A. Lin, P.-C. Chiu, M. L. Huang, H.-K. Lin, T. H. Chiang, W. C. Lee, Y. C. Chang, Y. H. Chang, J.-I. Chyi, G. J. Brown, J. Kwo, and M. Hong, J. Vac. Technol. B30, 02B118 DOI: 10.1116/1.3678206 (2012).

34.“Ge metal-oxide-semiconductor devices with Al2O3/Ga2O3(Gd2O3) as gate dielectric”, L. K. Chu, T. H. Chiang, T. D. Lin, Y. J. Lee, R. L. Chu, J. Kwo, and M. Hong, Microelectronic Engineering 91, 89-92 DOI: 10.1016/j.mee.2011.10.013 (2012).

35.“Thickness-dependent lattice relaxation and the associated optical properties of ZnO epitaxial films grown on Si (111)”, W.-R. Liu, B. H. Lin, C. C. Kuo, W. C. Lee, M. Hong, J. Kwo, C.-H. Hsu, and W. F. Hsieh, CrystEngComm 14 8103 (2012) DOI: 10.1039/c2ce26074c

36.“The influence of dislocations on optical and electrical properties of epitaxial ZnO on Si (111) using a -Al2O3 buffer layer”, W.-R. Liu, B. H. Lin, S. Yang, C. C. Kuo, Y.-H. Li, C.-H. Hsu, W. F. Hsieh, W. C. Lee, M. Hong, and J. Kwo, CrystEngComm 14 1665 DOI: 10.1039/c2ce06218f (2012).

37.“Atomic-scale determination of band offsets at the Gd2O3/GaAs (100) hetero-interface using scanning tunneling spectroscopy”, Y. P. Chiu, B. C. Huang , M. C. Shih, J. Y. Shen, P. Chang, C. S. Chang, M. L. Huang, M. -H. Tsai, M. Hong, and J. Kwo, Appl. Phys. Lett. 99, 212101 (2011).

38.“Self-aligned inversion-channel In0.53Ga0.47As metal-oxide-semiconductor field-effect transistors with in-situ deposited Al2O3/Y2O3 as gate dielectrics”, P. Chang, H.-C. Chiu, T.-D. Lin, M.-L. Huang, W. H. Chang, S.-Y. Wu, K.-H. Wu, M. Hong, and J. Kwo, Appl. Phys. Express 4 114202 (2011).

39.“Achieving a low interfacial density of states with a flat distribution in high Ga2O3(Gd2O3) directly deposited on Ge”, C. A. Lin, H. C. Lin, T. H. Chiang, R. L. Chu, L. K. Chu, T. D. Lin, Y. C. Chang, W.-E Wang, J. Kwo, and M. Hong, Appl. Phys. Express 4 111101 (2011).

40.“Defect density reduction of the Al2O3/GaAs(001) interface by using H2S molecular beam passivation”, C. Merckling, Y.C. Chang, C.Y. Lu, J. Penaud, G. Brammertz, M. Scarrozza, G. Pourtois, J. Kwo, M. Hong, J. Dekoster, M. Meuris, M. Heyns, and M. Caymax, Surface Science 605, Issues 19-20, 1778-1783 (2011).

41.“Low interfacial trap density and sub-nm equivalent oxide thickness in In0.53Ga0.47As (001) metal-oxide-semiconductor devices using molecular beam deposited HfO2/Al2O3 as gate dielectrics”, L. K. Chu, C. Merckling, A. Alian, J. Dekoster, J. Kwo, M. Hong, M. Caymax, and M. Heyns, Appl. Phys. Lett. 99, 042908 (2011).

42.“The Growth of an Epitaxial ZnO Film on Si(111) with a Gd2O3(Ga2O3) Buffer Layer”, B. H. Lin, W. R. Liu, S. Yang, C. C. Kuo, C.-H. Hsu, W. F. Hsieh, W. C. Lee, Y. J. Lee, M. Hong, and J. Kwo, Cryst. Growth Des. 11, 2846–2851 (2011).

43.“Direct measurement of interfacial structure in epitaxial Gd2O3 on GaAs (100) using scanning tunneling microscopy”, Y. P. Chiu, M. C. Shih, B. C. Huang, J. Y. Shen, M. L. Huang, W. C. Lee, P. Chang, T. H. Chiang, M. Hong, and J. Kwo , Microelectronic Engineering 88, 1058-1060 (2011).

44.“In-situ atomic layer deposition and synchrotron-radiation photoemission study of Al2O3 on pristine n-GaAs (001)-4×6 surface”, Y.H. Chang, M.L. Huang, P. Chang, J.Y. Shen, B.R. Chen, C.L. Hsu, T.W. Pi, M. Hong, J. Kwo, Microelectronic Engineering 88, 1101-1104 (2011).

45.“Atomic-layer-deposited Al2O3 and HfO2 on GaN: a comparative study on interfaces and electrical characteristics”, Y.C. Chang, M.L. Huang, Y.H. Chang, Y.J. Lee, H.C. Chiu, J. Kwo, M. Hong, Microelectronic Engineering 88, 1207-1210 (2011).

46.“Epitaxial stabilization of a monoclinic phase in Y2O3 films on c-plane GaN”, W.H. Chang, P. Chang, W.C. Lee, T.Y. Lai, J. Kwo, C.-H. Hsu, J.M. Hong, and M. Hong, J. Crystal Growth 323 107-110 (2011).

47.“Strong crystal anisotropy of magneto-transport property in Fe3Si epitaxial film”, H.Y. Hung, S.Y. Huang, P. Chang, W.C. Lin, Y.C. Liu, S.F. Lee, M. Hong, J. Kwo, J. Crystal Growth 323 372-375 (2011).

48.“MBE - enabling technology beyond Si CMOS”, (invited talk) P. Chang, W. C. Lee, T. D. Lin, C. H. Hsu, J. Kwo, and M. Hong, J. Crystal Growth 323 511-517 (2011).

49.“Achieving very high drain current of 1.23 mA/μm in a 1μm-gate-length self-aligned inversion-channel MBE-Al2O3/Ga2O3(Gd2O3)/In0.75Ga0.25As MOSFET”, T.D. Lin, P. Chang, Y.D. Wu, H.C. Chiu, J. Kwo, and M. Hong, J. Crystal Growth 323, 518-521 (2011).

50.“Low Interfacial Density of States around Mid-gap in MBE-Ga2O3(Gd2O3)/In0.2Ga0.8As”, C. A. Lin, H. C. Chiu, T. H. Chiang, Y. C. Chang, T. D. Lin, J. Kwo, W. E Wang, J. Dekoster, M. Heyns, and M. Hong, J. Crystal Growth 323 99-102 (2011).

51.“Self-aligned inversion-channel In0.2Ga0.8As metal-oxide-semiconductor field-effect transistor with molecular beam epitaxy Al2O3/Ga2O3(Gd2O3) as the gate dielectric”, W. H. Chang, T. H. Chiang, Y. D. Wu, M. Hong, C. A. Lin, and J. Kwo, J. Vac. Sci. Technol. B: Microelectronics and Nanometer Structures 29(3), 03C122- 03C122-4 (2011).

52.“Direct determination of flat-band voltage for metal/high  oxide/semiconductor heterointerfaces by electric-field-induced second-harmonic generation”, C.-L. Chang, W. C. Lee, L. K. Chu, M. Hong, J. Kwo, and Y.-M. Chang, Appl. Phys. Lett. 98, 171902 (2011).

53.“Magnetization reversal processes of epitaxial Fe3Si films on GaAs(001)”, Y. C. Liu, P. Chang, S. Y. Huang, L. J. Chang, W. C. Lin, S. F. Lee, M. Hong, and J. Kwo, Journal of Applied Physics 109(7), 07D508 - 07D508-3 (2011).

54.“InGaAs and Ge MOSFETs with high dielectrics” (invited talk), W.C. Lee, P. Chang, T.D. Lin, L.K. Chu, H.C. Chiu, J. Kwo, and M. Hong, Microelectronic Engineering 88, 336 - 341 (2011).

55.“H2S Molecular Beam Passivation of Ge(001)”, C. Merckling, Y.C. Chang, C.Y. Lu, J. Penaud, M. El-Kazzi, F. Bellenger, G. Brammertz, M. Hong, J. Kwo, M. Meuris, J. Dekoster, M.M. Heyns, and M. Caymax, Microelectronic Engineering 88, 399 - 402 (2011).

56.“Electrical properties and interfacial chemical environments of in-situ atomic layer deposited Al2O3 on freshly molecular beam epitaxy grown GaAs” Y. H. Chang, M. L. Huang, P. Chang, C. A. Lin, Y. J. Chu, B. R. Chen, C. L. Hsu, J. Kwo, T. W. Pi, and M. Hong, Microelectronic Engineering 88, 440–443 (2011).

57.“Electronic structures of Ga2O3(Gd2O3) gate dielectric on n-Ge(001) as grown and after CF4 plasma treatment: A synchrotron-radiation photoemission study”, T.-W. Pi (皮敦文), W. C. Lee (李威縉), M. L. Huang (黃懋霖), L. K. Chu (朱龍琨), T. D. Lin (林宗達), T. H. Chiang (江宗鴻), Y. C. Wang (王貽樟), Y. D. Wu (吳彥達), M. Hong (洪銘輝), and J. Kwo (郭瑞年), J. Appl. Phys.109, 063725 (2011).

58.“Attainment of low interfacial trap density absent of a large midgap peak in In0.2Ga0.8As by Ga2O3(Gd2O3) Passivation”, C. A. Lin, H. C. Chiu, T. H. Chiang, T. D. Lin, Y. H. Chang, W. H. Chang, Y. C. Chang, W.–E. Wang, J. Dekoster, T. Y. Hoffmann, M. Hong, and J. Kwo, Appl. Phys. Lett. 98, 062108 (2011).

59.“High-resolution core-level photoemission study of CF4-treated Gd2O3(Ga2O3) gate dielectric on Ge probed by synchrotron radiation”, T.-W. Pi (皮敦文), M. L. Huang (黃懋霖), W. C. Lee (李威縉), L. K. Chu (朱龍琨), T. D. Lin (林宗達), T. H. Chiang (江宗鴻), Y. C. Wang (王貽樟), Y. D. Wu (吳彥達), M. Hong (洪銘輝), and J. Kwo (郭瑞年), Appl. Phys. Lett. 98, 062903 (2011).

60.“Thermal Annealing and Grain Boundary Effects on Ferromagnetism in Y2O3:Co Diluted Magnetic Oxide Nanocrystals”, Y. L. Soo, T. S. Wu , C. S. Wang, S. L. Chang, H. Y. Lee, P. P. Chu, C. Y. Chen, L. J. Chou, T. S. Chan, C. A. Hsieh, J. F. Lee, J. Kwo, and M. Hong, Appl. Phys. Lett. 98, 031906 (2011).

61.“Structural characteristics of nano-meter thick Gd2O3 epi-films grown on GaN (0001)”, W. H. Chang, P. Chang, T. Y. Lai, Y. J. Lee, J. Kwo, C. H. Hsu, and M. Hong, Crystal Growth & Design 10(12), 5117-5122 (2010).

62.“Drain current enhancement and negligible current collapse in GaN MOSFETs with atomic-layer-deposited HfO2 as a gate dielectric”, Y. C. Chang, W. H. Chang, Y. H. Chang, J. Kwo, Y. S. Lin, S. H. Hsu, J. M. Hong, C. C. Tsai, and M. Hong, Microelectronic Engineering 87(11) 2042 (2010).

63.“Effective Reduction of Interfacial Traps in Al2O3/GaAs (001) Gate Stacks Using Surface Engineering and Thermal Annealing”, Y. C. Chang, C. Merckling, J. Penaud, C. Y. Lu, W. E. Wang, J. Dekoster, M. Meuris, M. Caymax, M. Heyns, J. Kwo, and M. Hong, Appl. Phys. Lett. 97, 112901 (2010).

64.“Self-aligned inversion-channel In0.75Ga0.25As metal-oxide-semiconductor field-effect-transistors using UHV-Al2O3/Ga2O3(Gd2O3) and ALD-Al2O3 as gate dielectrics”, T.D. Lin, H.C. Chiu, P. Chang, Y.H. Chang, Y.D. Wu, M. Hong, and J. Kwo, Solid State Electronics 54, 919-924 (2010).

65.“Effective passivation and high-performance metal-oxide-semiconductor devices using ultra-high-vacuum deposited high- dielectrics on Ge without interfacial layers”, L.K. Chu, R.L. Chu, T.D. Lin, W.C. Lee, C.A. Lin, M.L. Huang, Y.J. Lee, J. Kwo, and M. Hong, Solid State Electronics 54, 965-971 (2010).

66.“Passivation of InGaAs using in situ molecular beam epitaxy Al2O3/HfO2 and HfAlO/HfO2”, P. Chang, W. C. Lee, M. L. Huang, Y. J. Lee, M. Hong, and J. Kwo, J. Vac. Sci. Technol. B 28(3), C3A9 (2010).

67.“High-quality molecular-beam-epitaxy-grown Ga2O3(Gd2O3) on Ge (100): Electrical and chemical characterizations”, R. L. Chu, T. D. Lin, L. K. Chu, M. L. Huang, C. C. Chang, M. Hong, C. A. Lin, and J. Kwo, J. Vac. Sci. Technol. B 28(3), C3A1 (2010).

68. “Lattice strain and in situ chemical depth profiling of nanometer-thick molecular beam epitaxy grown Y2O3 epitaxial films on Si (111)”, Y. J. Lee, W. C. Lee, M. L. Huang, S. Y. Wu, C. W. Nieh, M. Hong, J. Kwo, and C.-H. Hsu, J. Vac. Sci. Technol. B 28(3), C3A17 (2010).

69.“dc and rf characteristics of self-aligned inversion-channel In0.53Ga0.47As metal-oxide-semiconductor field-effect transistors using molecular beam epitaxy-Al2O3/Ga2O3(Gd2O3) as gate dielectrics”, T. D. Lin, P. Chang, H. C. Chiu, M. Hong, J. Kwo, Y. S. Lin, and Shawn S. H. Hsu, J. Vac. Sci. Technol. B 28(3), C3H14 (2010).

70.“Engineering of threshold voltages in molecular beam epitaxy-grown Al2O3/Ga2O3(Gd2O3)/In0.2Ga0.8As”, Y. D. Wu, T. D. Lin, T. H. Chiang, Y. C. Chang, H. C. Chiu, Y. J. Lee, M. Hong, C. A. Lin and J. Kwo, J. Vac. Sci. Technol. B 28(3), C3H10 (2010).

71.“InGaAs, Ge, and GaN Metal-Oxide-Semiconductor Devices with High  Dielectrics for Science and Technology beyond Si CMOS”, M. Hong, J. Kwo, T. D. Lin, M. L. Huang, W. C. Lee, and P. Chang, Springer book chapter.

72.“Al2O3/Ga2O3(Gd2O3) passivation on In0.20Ga0.80As/GaAs – structural intactness of high-temperature annealing”, Y. J. Lee, C. H. Lee, L. T. Tung, T. H. Chiang, T. Y. Lai, J. Kwo, C.-H. Hsu, and M. Hong, Journal of Physics D: Applied Physics, 43 (2010) 135101.

73.“Nanometer-thick single-crystal hexagonal Gd2O3 on GaN for advanced complementary metal-oxide-semiconductor technology”, W. H. Chang, C. H. Lee, Y. C. Chang, P. Chang, M. L. Huang, Y. J. Lee, C. H. Hsu, J. M. Hong, C. C. Tsai, J. R. Kwo, and M. Hong, Advanced Materials 21 4970–4974 (2009).

74.“Surface Exciton Polariton in HfO2: Electron Energy-Loss Spectroscopy Study”, S.-C. Liou, M.-W. Chu, Y.-J. Lee, M. Hong, J. Kwo, and C. H. Chen, New Journal of Physics 11 103009 (2009).

75.“InGaAs Metal Oxide Semiconductor Devices with Ga2O3(Gd2O3) High- Dielectrics for Science and Technology beyond Si Complementary Metal Oxide Semiconductors “, M. Hong, J. Kwo, T. D. Lin, and M. L. Huang, MRS Bulletin 34, 514 July 2009.

76.“Ga2O3(Gd2O3) on Ge without interfacial layers: energy-band parameters and metal oxide semiconductor devices”, L. K. Chu, T. D. Lin, M. L. Huang, R. L. Chu, C. C. Chang, J. Kwo, and M. Hong, Appl. Phys. Lett. 94, 202108 (2009). This paper has been selected for the June 1, 2009 issue of Virtual Journal of Nanoscale Science & Technology. The Virtual Journal, which is published by the American Institute of Physics and the American Physical Society in cooperation with numerous other societies and publishers, is an edited compilation of links to articles from participating publishers, covering a focused area of frontier research.

77.“Research Advances on III-V MOSFET Electronics Beyond Si CMOS”, J. Kwo and M. Hong, J. Crystal Growth 311, 1944-1949 (2009). Presented at (15th International Conference on Molecular Beam Epitaxy (MBE2008), August 4-8, 2008)

78.“Depletion-mode In0.2Ga0.8As/GaAs MOSFET with molecular beam epitaxy grown Al2O3/Ga2O3(Gd2O3) as gate dielectrics”, C. A. Lin, T. D. Lin, T. H. Chiang, H. C. Chiu, P. Chang, M. Hong, and J. Kwo, J. Crystal Growth 311, 1954–1957 (2009). Presented at (15th International Conference on Molecular Beam Epitaxy (MBE2008), August 4-8, 2008)

79.“Inversion-channel enhancement mode GaAs MOSFETs with regrown source and drain contacts”, C. C. Liao, D. Cheng, C. C. Cheng, K. Y. Cheng, M. Feng, T. H. Chiang, J. Kwo, and M. Hong, J. Crystal Growth 311, 1958–1961 (2009). Presented at (15th International Conference on Molecular Beam Epitaxy (MBE2008), August 4-8, 2008)

80.“GaN on Si with nm-thick single crystal Sc2O3 as a template using molecular beam epitaxy”, W. C. Lee, Y. J. Lee, J. Kwo, C. H. Hsu, C. H. Lee, S. Y. Wu, H. M. Ng, and M. Hong, J. Crystal Growth 311, 2006-2009 (2009). Presented at (15th International Conference on Molecular Beam Epitaxy (MBE2008), August 4-8, 2008)

81.“GaN metal-oxide-semiconductor diodes with molecular beam epitaxy-Al2O3 as a template followed by atomic layer deposition growth”, Y. H. Chang, H. C. Chiu, W. H. Chang, J. Kwo, C. C. Tsai, J. M. Hong, and M. Hong, J. Crystal Growth 311, 2084-2086 ( 2009). Presented at (15th International Conference on Molecular Beam Epitaxy (MBE2008), August 4-8, 2008)

82.“High dielectric single-crystal monoclinic Gd2O3 on GaN with excellent thermal, structural, and electrical properties”, W. H. Chang, C. H. Lee, P. Chang, Y. C. Chang, Y. J. Lee, J. Kwo, C. C. Tsai, J. M. Hong, C.-H. Hsu, and M. Hong, J. Crystal Growth 311, 2183–2186 (2009). Presented at (15th International Conference on Molecular Beam Epitaxy (MBE2008), August 4-8, 2008)

83.“Molecular Beam Epitaxy-Grown Al2O3/HfO2 High-κ Dielectrics for Germanium”, W. C. Lee, B. H. Chin, L. K. Chu, T. D. Lin, Y. J. Lee, L. T. Tung, C. H. Lee, M. Hong, and J. Kwo, J. Crystal Growth 311, 2187-2190 (2009). Presented at (15th International Conference on Molecular Beam Epitaxy (MBE2008), August 4-8, 2008)

84.“Metal-oxide-semiconductor devices with molecular beam epitaxy-grown Y2O3 on Ge”, L. K. Chu, W. C. Lee, M. L. Huang, Y. H. Chang, L. T. Tung, C. C. Chang, Y. J. Lee, J. Kwo, and M. Hong, J. Crystal Growth 311, 2195–2198 (2009). Presented at (15th International Conference on Molecular Beam Epitaxy (MBE2008), August 4-8, 2008)

85.“Energy-band parameters of atomic-layer-deposited Al2O3 and HfO2 on InxGa1-xAs”, M. L. Huang, Y. C. Chang, Y. H. Chang, T. D. Lin, J. Kwo, and M. Hong, Appl. Phys. Lett. 94, 052106 (2009).

86.“Domain Matching Epitaxial Growth of High-Quality ZnO Film Using a Y2O3 Buffer Layer on Si (111)”, W.-R. Liu, Y.-H. Li, W. F. Hsieh, C.-H. Hsu, W. C. Lee, Y. J. Lee, M. Hong, and J. Kwo, Cryst. Growth Des., 9 (1), 239-242 (2009).

87.“Achieving low interfacial trap density in atomic layer deposited Al2O3 on In0.53Ga0.47As”, H. C. Chiu, L. T. Tung, Y. H. Chang, Y. J. Lee, C. C. Chang, J. Kwo, and M. Hong, Appl. Phys. Lett. 93, 202903 (2008).

88.“Self-aligned inversion n-channel In0.2Ga0.8As/GaAs metal-oxide-semiconductor field-effect-transistors with TiN gate and Ga2O3(Gd2O3) dielectric”, C. P. Chen, T. D. Lin, Y. J. Lee, Y. C. Chang, M. Hong, and J. Kwo, Solid-State Electronics 52, 1615 (2008). Presented at the 2007 ISDRS Univ. Maryland.

89.“Inversion-channel GaN metal-oxide-semiconductor field-effect transistor with atomic-layer- deposited Al2O3 as gate dielectric”, Y. C. Chang, W. H. Chang, H. C. Chiu, L. T. Tung, C. H. Lee, K. H. Shiu, M. Hong, J. Kwo, J. M. Hong, and C. C. Tsai, Appl. Phys. Lett. 93, 053504 (2008).

90.“High-performance self-aligned inversion-channel In0.53Ga0.47As metal-oxide-semiconductor field-effect-transistor”, T. D. Lin, H. C. Chiu, P. Chang, L. T. Tung, C. P. Chen, M. Hong, J. Kwo, W. Tsai, and Y. C. Wang, Appl. Phys. Lett. 93, 033516 (2008).

91.“Achieving 1 nm capacitive effective thickness in atomic layer deposited HfO2 on In0.53Ga0.47As”, K. Y. Lee, Y. J. Lee, P. Chang, M. L. Huang, Y. C. Chang, M. Hong, and J. Kwo, Appl. Phys. Lett. 92, 252908 (2008).

92."Si metal-oxide-semiconductor devices with high κ dielectrics fabricated using a novel MBE template approach followed by atomic layer deposition" C. H. Pan, J. Kwo, K. Y. Lee, W. C. Lee, L. K. Chu, M. L. Huang, Y. J. Lee, and M. Hong, J. Vac. Sci. Technol. B 26, 1178 (2008). 25th North American Molecular Beam Epitaxy Conference, Albuquerque, New Mexico/USA, September 23-26, 2007.

93."Oxide scalability in Al2O3/Ga2O3(Gd2O3)/In0.20Ga0.80As/GaAs heterostructures" K. H. Shiu, C. H. Chiang, Y. J. Lee, W. C. Lee, P. Chang, L. T. Tung, M. Hong, J. Kwo, and W. Tsai, J. Vac. Sci. Technol. B 26, 1132 (2008). 25th North American Molecular Beam Epitaxy Conference, Albuquerque, New Mexico/USA, September 23-26, 2007.

94."Molecular beam epitaxy grown Ga2O3(Gd2O3) high kappa dielectrics for germanium passivation-x-ray photoelectron spectroscopy and electrical characteristics", C. H. Lee, T. D. Lin, L. T. Tung, M. L. Huang, M. Hong, and J. Kwo, J. Vac. Sci. Technol. B 26, 1128 (2008). 25th North American Molecular Beam Epitaxy Conference, Albuquerque, New Mexico/USA, September 23-26, 2007.

95."High-quality nanothick single crystal Y2O3 films epitaxially grown on Si (111): growth and structural characteristics " Y. J. Lee, W. C. Lee, C. W. Nieh, Z. K. Yang, A. R. Kortan, M. Hong, J. Kwo, and C.-H. Hsu, J. Vac. Sci. Technol. B 26, 1124 (2008). 25th North American Molecular Beam Epitaxy Conference, Albuquerque, New Mexico/USA, September 23-26, 2007.

96."Growth and Structural Characteristics of GaN/AlN/nano thick -Al2O3/Si (111)", W. C. Lee, Y. J. Lee, L. T. Tung, S. Y. Wu, C. H. Lee, M. Hong, H. M. Ng, J. Kwo, and C. H. Hsu, J. Vac. Sci. Technol. B 26, 1064 (2008). 25th North American Molecular Beam Epitaxy Conference, Albuquerque, New Mexico/USA, September 23-26, 2007.

97.“Transmission Electron Microscopy Characterization of HfO2/GaAs(001) Heterostructures Grown by Molecular Beam Epitaxy”, S. C. Liou, M.-W. Chu, C. H. Chen, Y. J. Lee, P. Chang, W. C. Lee, M. Hong, and J. Kwo, Applied Phys. A-MATERIALS SCIENCE & PROCESSING, 91 585 (2008). DOI: 10.1007/s00339-008-4493-3.

98.“1 nm equivalent oxide thickness in Ga2O3(Gd2O3)/In0.2Ga0.8As metal-oxide-semiconductor capacitors”, K. H. Shiu, T. H. Chiang, P. Chang, L. T. Tung, M. Hong, J. Kwo, and W. Tsai, Appl. Phys. Lett. 92, 172904 (2008).

99.“Correlation between crystal structure and photoluminescence for epitaxial ZnO on Si (111) using a γ-Al2O3 buffer layer”, W. R. Liu, Y. H. Li, W. F. Hsieh, C. H. Hsu, W. C. Lee, M. Hong, and J. Kwo, J. Phys. D: Appl. Phys. 41, 065105 (2008).

100.“Atomic-layer-deposited HfO2 on In0.53Ga0.47As: passivation and energy-band parameters”, Y. C. Chang, M. L. Huang, K. Y. Lee, Y. J. Lee, T. D. Lin, M. Hong, J. Kwo, T. S. Lay, C. C. Liao, and K. Y. Cheng, Appl. Phys. Lett, 92, 072901 (2008).

101.“Nanometer thick single crystal Y2O3 films epitaxially grown on Si (111) with structures approaching perfection”, C. W. Nieh, Y. J. Lee, W. C. Lee, Z. K. Yang, A. R. Kortan, M. Hong, J. Kwo, and C. H. Hsu, Appl. Phys. Lett, 92, 061914 (2008).

102.“Time Dependent Preferential Sputtering in the HfO2 layer on Si (100)”, S. J. Chang, W. C. Lee, J. Hwang, M. Hong, and J. Kwo, Thin Solid Films 516, 948 - 952 (2008).

103.“Inelastic Electron Tunneling Spectroscopy Study of Metal-oxide-semiconductor Diodes Based on High-κ Gate Dielectrics”, S. L. You, C. C. Huang, C. J. Wang, H. C. Ho, J. Kwo, and W. C. Lee, K. Y. Lee, Y. D. Wu, Y. J. Lee, and M. Hong, Appl. Phys. Lett, 92, 012113, (2008).

104. “Ga2O3(Gd2O3)/Si3N4 Dual -Layer Gate Dielectric for InGaAs Enhancement Mode MOSFET with Channel Inversion”, J.-F. Zheng, W. Tsai, T. D. Lin, Y. J. Lee, C. P. Chen, M. Hong, J. Kwo, S. Cui, and T. P. Ma, Appl. Phys. Lett. 91, 223502 (2007).

105.“Structural and compositional investigation of yttrium-doped HfO2 films epitaxially grown on Si (111)”, Z. K. Yang, W. C. Lee, Y. J. Lee, P. Chang, M. L. Huang, M. Hong, K. L. Yu, M.-T. Tang, B. H. Lin, C.-H. Hsu, and J. Kwo, Appl. Phys. Lett. 91, 202909 (2007).

106.“Advance in next century nano CMOSFET research and its future prospects for industry”, H. L. Hwang, Y. K. Chiou, C. H. Chang, C. C. Wang, K. Y. Lee, T. B. Wu, R. Kwo, M. Hong, K. S. Chang-Liao, C. Y. Lu, C. C. Lu, F. C. Chiu, C. H. Chen, J. Y. M. Lee, and A. Chin, Applied Surface Science 254 (1): 236-241 Sp. Iss. SI OCT 31 (2007).

107.“Local environment surrounding Co in MBE-grown Co-doped HfO2 thin films probed by EXAFS”, Y. L. Soo, S. C. Weng, W. H. Sun, S. L. Chang, W. C. Lee, Y. S. Chang, J. Kwo, M. Hong, J. M. Ablett, C.-C. Kao, D. G. Liu, and J. F. Lee, Physical Review B 76, 132404, (2007).

108. “Observation of room temperature ferromagnetic behavior in cluster free, Co doped HfO2 films”, Y. H. Chang, Y. L. Soo, W. C. Lee, M. L. Huang, Y. J. Lee, S. C. Weng, W. H. Sun, M. Hong, J. Kwo, S. F. Lee, J. M. Ablett, and C-. C. Kao, Applied Physics Letters 91, 082504 (2007).

109.“Structural and electrical characteristics of atomic layer deposited high  HfO2 on GaN”, Y. C. Chang, H. C. Chiu, Y. J. Lee, M. L. Huang, K. Y. Lee, M. Hong, Y. N. Chiu, J. Kwo, and Y. H. Wang, Applied Physics Letters 90, 232904 (2007).

110.“Defining new frontiers in electronic devices with high  dielectrics and interfacial engineering”, M. Hong, W. C. Lee, M. L. Huang, Y. C. Chang, T. D. Lin, Y. J. Lee, J. Kwo, C. H. Hsu and H. Y. Lee, Thin Solid Films 515, 5581-5586, (2007). (Invited paper, Intl 9sxns, 2006).

111.“Determination of three-dimensional interfacial strain - A novel method of probing interface structure with x-ray Bragg-surface diffraction”, W. C. Sun, C. H. Chu, H. C. Chang, B. K. Wu, Y. R. Chen, C. W. Cheng, M. S. Chiu, Y. C. Shen, H. H. Wu, Y. S. Hung, S. L. Chang, M. H. Hong, M. T. Tang, Y. Stetsko, Thin Solid Films 515 (14), 5716-5723 MAY 23, 2007

112. “III-V MOSFET’s with High  Dielectrics”, M. W. Hong, J. R. Kwo, P. C. Tsai, Y. C. Chang, M. L. Huang, C. P. Chen, and T. D. Lin, Japanese Journal of Applied Physics, Part 1 46, Issue 5B, 3167-3180 (2007). (Invited talk IWDTF (Dielectric Thin Films for Future ULSI Devices) 2006 Kawasaki, Japan.)

113.“Cubic HfO2 doped with Y2O3 epitaxial films on GaAs (001) of enhanced dielectric constant”, Z. K. Yang, W. C. Lee, Y. J. Lee, P. Chang, M. L. Huang, M. Hong, C.-H. Hsu, and J. Kwo, Appl. Phys. Lett. 90, 152908 (2007). (The paper has also been selected for the April 23, 2007 issue of Virtual Journal of Nanoscale Science & Technology.)

114. “A novel MBE template approach for ALD high  dielectrics growth”, K. Y. Lee, W. C. Lee, M. L. Huang,, C. H. Chang, Y. J. Lee, T. B. Wu, M. Hong, and J. Kwo, J. Crystal Growth 301-302, 378, 2007. (14th International Conference on Molecular Beam Epitaxy (MBE2006), September 3-8, 2006).

115.“MBE grown high-quality Gd2O3/Si (111) hetero-structure”, T. D. Lin, M. C. Hang, C. H. Hsu, J. Kwo, and M. Hong, J. Crystal Growth 301-302, 386-389, (2007). (14th International Conference on Molecular Beam Epitaxy (MBE2006), September 3-8, 2006).

116.“MBE grown high κ dielectrics of Ga2O3(Gd2O3) for GaN”, Y. C. Chang, Y. J. Lee, Y. N. Chiu, T. D. Lin, S. Y. Wu, H. C. Chiu, J. Kwo, Y. H. Wang, and M. Hong, J. Crystal Growth 301-302, 390-393 (2007). 14th International Conference on Molecular Beam Epitaxy (MBE2006), September 3-8, 2006.

117.“Structural and Magnetic properties of Epitaxial Fe3Si/GaAs Heterostructures”, Y. L. Hsu, Y. J. Lee, Y. H. Chang, M. L. Huang, Y. N. Chiu, C. C. Ho, P. Chang, C. H. Hsu, M. Hong, and J. Kwo, J. Crystal Growth 301-302, 588, 2007. (14th International Conference on Molecular Beam Epitaxy (MBE2006), September 3-8, 2006).

118.“Interfacial trap characteristics in depletion mode GaAs MOSFET’s”, T. C. Lee, C. Y. Chan, P. J. Tsai, Shawn S. H. Hsu, J. Kwo, and M. Hong, J. Crystal Growth 301-302, 1009-1012, (2007). (14th International Conference on Molecular Beam Epitaxy (MBE2006), September 3-8, 2006).

119.“Depletion mode GaAs-based MOSFET with Ga2O3(Gd2O3) as a gate dielectric”, P. J. Tsai, L. K. Chu, Y. W. Chen, Y. N. Chiu, H. P. Yang, P. Chang, J. Kwo, J. Chi, and M. Hong, J. Crystal Growth 301-302, 1013-1016, (2007). (14th International Conf. on Molecular Beam Epitaxy (MBE2006), September 3-8, 2006).

120. “Effect of Al Incorporation in the Thermal Stability of Atomic-Layer-Deposited HfO2 for Gate Dielectric Applications”, Yan-Kai Chiou, Che-Hao Chang, Chen-Chan Wang, Kun-Yu Lee, Tai-Bor Wu, Raynien Kwo, and Minghwei Hong, Journal of The Electrochemical Society, 154 (4) G99-G102, 2007.

121.“Interfacial self-cleaning in atomic layer deposition of HfO2 gate dielectric on In0.15Ga0.85As”, C.-H. Chang, Y.-K. Chiou, Y.-C. Chang, K.-Y. Lee, T.-D. Lin, T.-B. Wu, M. Hong, and J. Kwo, Appl. Phys. Lett. 89, 242911, 2006.

122.“Molecular beam epitaxy grown template for subsequent atomic layer deposition of high k dielectrics”, K. Y. Lee, W. C. Lee, Y. J. Lee, M. L. Huang, C. H. Chang, T. B. Wu, M. Hong, and J. Kwo, Appl. Phys. Lett. 89, 222906, 2006.

123.“Structural and electrical studies of Ga2O3(Gd2O3)/GaAs under high temperature annealing”, C. P. Chen, Y. J. Lee, Y. C. Chang, Z. K. Yang, M. Hong, J. Kwo, H. Y. Lee, and T. S. Lay, J. Appl. Phys. 100, 104502 (2006).

124.“Structure of HfO2 films epitaxially grown on GaAs (001)”, C. H. Hsu, P. Chang, W. C. Lee, Z. K. Yang, Y. J. Lee, M. Hong, J. Kwo, C. M. Huang, and H. Y. Lee, Appl. Phys. Lett. 89 (12), 122907, 2006.

125.“Measuring interface strains at the atomic resolution in depth using x-ray Bragg-surface diffraction”, W. C. Sun, H. C. Chang, B. K. Wu, Y. R. Chen, C. H. Chu, S. L. Chang, M. Hong, M. T. Tang, and Yu. P. Stetsko, Appl. Phys. Lett, 89, 091915, 2006.

126.“Energy-band parameters of atomic-layer-deposition-Al2O3/InGaAs heterostructures”, M. L. Huang, Y. C. Chang, C. H. Chang, T. D. Lin, J. Kwo, T. B. Wu, and M. Hong, Appl. Phys. Lett. 89, 012903, 2006.

127.“Structures of Sc2O3 films epitaxially grown on -Al2O3 (0001)”, A. R. Kortan, M. Hong, J. Kwo, C. P. Chen, J. P. Mannaerts, S. H. Liou, and N. Kopylov, Appl. Phys. Lett. 88, 021906, 2006.

128.“Probing interface Strain with x-ray Bragg-surface diffraction”, W.-C. Sun, H.-C. Chang, P.-K. Wu, Y.-R. Chen, C.-H. Chu, C.-W. Cheng, M.-S. Chiu, Y.-C. Shen, H.-H. Wu, W.-S. Sun, Y.-R. Lee, M. Hong, Yu. P. Stetsko, M.-T. Tang, and S.-L. Chang, Acta Crystallogr. A61, C410, 2005.

129.“High-Quality Nano-Thickness Single Crystal Sc2O3 film Grown on Si (111)”, M. Hong, A. R. Kortan, P. Chang, Y. L. Huang, C. P. Chen, H. Y. Chou, H. Y. Lee, J. R. Kwo, M. W. Chu, C. H. Chen, L. V. Goncharova, E. Garfunkel, and T. Gustafsson, Appl. Phys. Lett. 87, 251902, 2005.

130.“Surface passivation of III-V compound semiconductors using atomic-layer-deposition grown Al2O3”, M. L. Huang, Y. C. Chang, C. H. Chang, Y. J. Lee, P. Chang, J. Kwo, T. B. Wu, and M. Hong, Appl. Phys. Lett. 87, 252104, 2005.

131.“High-quality thin single crystal γ-Al2O3 films grown on Si (111)”, S. Y. Wu, M. Hong, A. R. Kortan, J. Kwo, J. P. Mannaerts, W. C. Lee, and Y. L. Huang, Appl. Phys. Lett. 87, 091908, 2005.

132.“Thermodynamic stability of Ga2O3 (Gd2O3)/GaAs interface”, Y. L. Huang, P. Chang, Z. K. Yang, Y. J. Lee, H. Y. Lee, H. J. Liu J. Kwo, J. P. Mannaerts, and M. Hong, Appl. Phys. Lett. 86, 191905, 2005.

133.“Depth-profiling the electronic structures at HfO2/Si interface grown by molecular beam epitaxy”, T. S. Lay, S. C. Chang, G. J. Din, C. C. Yeh, W. H. Hung, W. C. Lee, J. Kwo and M. Hong, J. Vac. Sci. & Technol. 23(3), 1291-1293, May-Jun, 2005. (NAMBE 2004 – 22nd North American MBE conference – Banff, Alberta, Canada October 11-13, 2004.)

134.“Depth-profile study of the electronic structures at Ga2O3(Gd2O3)- and Gd2O3-GaN interfaces by x-ray photoelectron spectroscopy”, T. S. Lay, Y. Y. Liao, W. H. Hung, M. Hong, and J. Kwo, Journal of Crystal Growth 278 624–628, 2005. (International Conference on MBE, August 23-27, 2004).

135.“MBE Grown High k Gate Dielectrics of HfO2 and (Hf-Al)O2 for Si and III-V Semiconductors Nano-electronics”, W. C. Lee, Y. J. Lee, Y. D. Wu, P. Chang, Y. L. Huang, Y. L. Hsu, J. P. Mannaerts, R. L. Lo, F. R. Chen, S. Maikap, L. S. Lee, W. Y. Hsieh, M. J. Tsai, S. Y. Lin, T. Gustffson, M. Hong, and J. Kwo, Journal of Crystal Growth 278, 619–623, 2005 (International Conference on MBE, August 23-27, 2004).

136.“Thin single crystal Sc2O3 films epitaxially grown on Si (111)”, C. P. Chen, M. Hong, J. Kwo, H. M. Cheng, Y. L. Huang, S. Y. Lin, J. Chi, H. Y. Lee, Y. F. Hsieh, and J. P. Mannaerts, Journal of Crystal Growth 278, 638–642, 2005 (International Conference on MBE, August 23-27, 2004).

137.“GaAs-based metal-oxide-semiconductor field-effect-transistors with Al2O3 gate dielectrics grown by atomic layer deposition”, P. D. Ye, G. D. Wilk, B. Yang, J. Kwo, H. J. L. Gossmann, M. Frei, J. P. Mannaerts, M. Sergent, M. Hong, K. K. Ng, and J. Bude, J. Electron. Mater. 33, 912, 2004.

138.“Depletion-mode InGaAs metal-oxide-semiconductor field-effect-transistor with oxide gate dielectric grown by atomic-layer deposition”, P. D. Ye, G. D. Wilk, B. Yang, J. Kwo, H.-J. L. Gossmann, M. Hong, K. K. Ng, and J. Bude, Appl. Phys. Lett. 84, 434, 2004.

139.“GaAs metal-oxide-semiconductor field-effect-transistor with nanometerthin dielectric grown by atomic layer deposition”, P. D. Ye, G. D. Wilk, B. Yang, J. Kwo, S. N. G. Chu, S. Nakahara, H.-J. L. Gossmann, J. P. Mannaerts, M. Hong, K. K. Ng, and J. Bude, Appl. Phys. Lett. 83, 180, 2003.

140.“Schottky Barrier Height and Interfacial State Density on Oxide-GaAs Interface”, J. S. Hwang, M. F. Chen, C. C. Chang, M. F. Chen, C. C. Chen, K. I. Lin, F. C. Tang, M. Hong, and J. Kwo, J. Appl. Phys. 94 (1), pp. 348-353, 2003.

141.“Rapid post-metallization annealing effects on high-k Y2O3/Si capacitor”, T. S. Lay , Y. Y. Liao, W. D. Liu, Y. H. Lai, W. H. Hung, J. Kwo, M. Hong, J. P. Mannaerts , Solid State Electronics 47(2), 1021-1025 June 2003.

142.“GaAs MOSFET with oxide gate dielectric grown by atomic layer deposition”, P. D. Ye, G. D. Wilk, J. Kwo, B. Yang, H.-J.L. Gossmann, M. R. Frei, S. N. G. Chu, J. P. Mannaerts, M. Sergent, M. Hong, K. Ng, and J. Bude, IEEE Electron Device Letters v. 24, 4, p. 209, 2003.

143.“Optimization of AuGe/Ni/Au ohmic contacts for GaAs MOSFETs”, H. C. Lin, S. Senanayake, and K. Y. Cheng, M. Hong, J. Kwo, B. Yang, and J. P. Mannaerts, IEEE Trans. Electron Dev., vol. 50, no. 4, pp. 880-885, 2003.

144.“Advances in High  Gate Dielectrics for Si and III-V Semiconductors”, J. Kwo, M. Hong, B. Busch, D. A. Muller, Y. J. Chabal, A. R. Kortan, J. P. Mannaerts, B. Yang, P. Ye, H. Gossmann, A. M. Sergent, K. K. Ng, J. Bude, W. H. Schulte, E. Garfunkel, and T. Gustafsson, J. Crystal Growth, 251, 645, 2003.

145.“Impact of metal/oxide interface to DC and RF performance of D-mode GaAs MOSFET employing MBE grown Ga2O3(Gd2O3) as gate dielectric”, B. Yang, P. Ye, J. Kwo, M. Frei, H. Gossmann, J. P. Mannaerts, M. Sergent, M. Hong, K. K. Ng, and J. Bude, J. Crystal Growth, 251, 837, 2003.

146.“Electrical characteristics of ultrathin Pt/Y2O3/Si capacitor with rapid post-metallisation annealing”, T. S. Lay, W. D. Liu, J. Kwo, M. Hong, and J. P. Mannaerts, IEE Electronics Letters 38, No. 24, pp. 1594-1596, 21st November, 2002.

147.“Direct atomic structure determination of epitaxially grown films: Gd2O3 on GaAs(100)”, M. Sowwan, Y. Yacoby, J. Pitney, R. MacHarrie, M. Hong, J. Cross, D. A. Walko, R. Clarke, R. Pindak, and E. A. Stern, Phys. Rev. B 66, 205311, 2002 (12 pages).

148.“Structure of Gd2O3 films epitaxially grown on GaAs (100) and GaN (0001) surfaces”, T. Fluckiger, M. Erbudak, A. Hensch, Y. Weisskopf, M. Hong, and A. R. Kortan, Surface and Interface Analysis, 34, pp. 441-444, 2002.

149.“Optical properties of gallium oxide thin films”, M. Rebien, W. Henrion, M. Hong, J. P. Mannaerts, and M. Fleischer, Appl. Phys. Lett. 81, 250, 2002.

150.“Single crystal GaN/Gd2O3/GaN heterostructure”, M. Hong, J. Kwo, S. N. G. Chu, J. P. Mannaerts, A. R. Kortan, H. M. Ng, A. Y. Cho, K. A. Anselm, C. M. Lee and J. I. Chyi, J. Vac. Sci. Technol. B 20(3), 1274, 2002 (presented at the 20th NA MBE October 1-3, 2001).

151.“Interface reactions of high- Y2O3 gate oxides with Si”, B. W. Busch, J. Kwo, M. Hong, J.P. Mannaerts, B.J. Sapjeta, W.H. Schulte, E. Garfunkel, and T. Gustafsson, Appl. Phys. Lett. 79, 2447, 2001.

152.“Energy-band parameters at the GaAs- and GaN-Ga2O3(Gd2O3) interfaces”, T. S. Lay, M. Hong, J. Kwo, J. P. Mannaerts, W. H. Hung, and D. J. Huang, Solid State Electronics, 45, pp. 1679-1682, 2001.

153.“New Phase Formation of Gd2O3 films on GaAs (100)”, A. R. Kortan, M. Hong, J. Kwo, J. P. Mannaerts, J. J. Krajewski, N. Kopylov, C. Steiner, B. Bolliger, and M. Erbudak, J. Vac. Sci. Technol. B 19(4), p. 1434, 2001. (The paper was presented at 19th North American Conference on Molecular Beam Epitaxy, October 16-18, 2000, Arizona State University, Tempe, Arizona.)

154.“C-V and G-V characterization of Ga2O3(Gd2O3)/GaN capacitor with low interface state density”, T. S. Lay, W. D. Liu, M. Hong, J. Kwo, and J. P. Mannaerts, Electronics Letters, Vol. 37, No. 9, 595, 2001.

155.“Properties of High k Gate Dielectrics Gd2O3 and Y2O3 for Si”, J. Kwo, M. Hong, A. R. Kortan, K. L. Queeney, Y. J. Chabal, R. L. Opila, Jr., D. A. Muller, S. N. G. Chu, B. J. Sapjeta, T. S. Lay, J. P. Mannaerts, T. Boone, H. W. Krautter, J. J. Krajewski, A. M. Sergent, and J. M. Rosamilia, J. Appl. Phys. Vol. 89, No. 7, pp.3920-3927, 1 April, 2001.

156.“Probing the microscopic compositions at Ga2O3(Gd2O3)/GaAs interface by core level photoelectron spectroscopy”, T. S. Lay, K. H. Huang, W. H. Hung, M. Hong, J. Kwo, and J. P. Mannaerts, Solid State Electronics, 45, pp.423-426, 2001.

157.“Investigation of interfacial structures of oxides on GaAs substrates by HRTEM”, L. J. Chou and M. Hong, INSTITUTE OF PHYSICS CONFERENCE SERIES (169): 45-48 2001. (Microscopy of semiconducting materials 2001: proceedings of the Royal Microscopical Society Conference, Oxford University, 25-29 March 2001 / edited by A G Cullis and J L Hutchison.)

158.“Structural modifications of the Gd2O3 (110) films on GaAs (100)”, C. Steiner, B. Bolliger, M. Erbudak, M. Hong, A. R. Kortan, J. Kwo, and J. P. Mannaerts, Phys. Rev. B rapid communications, 62, No.16, R10614, 15 October, 2000.


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