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Title: Professor Member: Full Time Faculty
Name: Liang, Chi-Te Education: Ph.D. Cambridge University (1996)
WEB: http://web.phys.ntu.edu.tw/semi/ceos/general.htm Room: 416
Tel(1): (02)3366-5129 Tel(2):
E-Mail(1): E-Mail(2):
1.Mesoscopic and low-dimensional physics
2.Nanotechnology and nanophysics
3.Spin-dependent electron transport
4. Localisation, Landau quantisation and phase transitions in 2D
5. Hybrid semiconductor/superconductor systems
(1)‧ C.-T. Liang et al., Experimental evidence for Coulomb charging effects in an open quantum dot at zero magnetic field, Phys. Rev. Lett. 81, 3507 (1998).

(2)‧ C.-T. Liang et al., Fabrication and transport properties of clean long one-dimensional quantum wires formed in modulated doped GaAs/AlGaAs heterostructures, Appl. Phys. Lett. 75, 2975 (1999).

(3)‧ C.-T. Liang et al., Spin-dependent transport in a clean one-dimensional channel, Phys. Rev. B 60, 10687 (1999).

(4)‧ C.-T. Liang et al., Multilayered gated lateral quantum dot devices, Appl. Phys. Lett. 76, 1134 (2000).

(5)‧ C.-T. Liang et al., Spin-dependent transport in a quasiballistic quantum wire, Phys. Rev. B 61, 9952 (2000).

(6)‧ C.-T. Liang et al., Measurements of composite fermion conductivity dependence on carrier density, J. Phys.: Condens. Matter 16, 1095 (2004).

(7)‧ Gil-Ho Kim, C.-T. Liang, C. F. Huang, J.T. Nicholls, D. A. Ritchie, P. S. Kim, C. H. Oh, J. R. Juang and Y. H. Chang, From localization to Landau quantization in a two-dimensional GaAs electron system containing self-assembled InAs quantum dots, Phys. Rev. B 69, 073311 (2004).

(8)‧ C.-T. Liang et al., Gradual decrease of conductance of an adiabatic ballistic constriction below 2e 2 /h. Phys. Rev. B 70, 195324 (2004)

(9)‧ C.-T. Liang et al., Al0.15Ga0.85N/GaN high electron mobility transistor structures grown on p-type Si substrates, Appl. Phys. Lett. 89, 132107 (2006).

(10)‧ C.-T. Liang et al., Huge positive magnetoresistance in an InN film, Appl. Phys. Lett. 90, 172101 (2007)

(11)‧ C.-T. Liang et al., Huge positive magnetoresistance in a gated AlGaAs/GaAs high electron mobility transistor structure at high temperatures, Appl. Phys. Lett. 92, 132111 (2008)

(12)‧ C.-T. Liang et al., Electron heating and huge positive magnetoresistance in an AlGaAs/GaAs high electron mobility transistor structure at high temperatures, Appl. Phys. Lett. 92, 152117 (2008).