| 主要經歷 |
- 英國劍橋大學博士後研究
- 國立臺灣大學物理系助理教授及副教授
- 英國劍橋大學訪問學者
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| 教學與研究領域 |
1.介觀及低維物理：
介觀物理是介於微觀以及巨觀尺度之間的新研究領域。低維物理著重於二維，一維甚至零維系統的物理現象。這兩者有著密切的關係。而且有著令人驚訝的物理效應如：量子霍爾效應及庫侖效應等。
2.奈米技術及奈米物理：
奈米技術是國家科技重點發展要項。徹底了解在奈米結構中的物理性質有助於改善新一代半導體元件的功能進而發展出革命性的新穎元件。
3.電子傳輸之自旋相依性：
利用電子自旋的特性來改變電子傳輸的性質。這和spintronics關係密切且有助於發展下一代的半導體元件。一旦成功，很可能對人類生活有革命性的突破。
4. 侷限效應及相變
利用改變磁場及電場來研究二維系統之相變如絕緣態-量子霍爾態相變及絕緣態中之藍道量化效應等。
5. 複合半導體/超導體系統
研究在半導體中之電子傳輸如影響一鄰進但電絕緣之超導體之電傳輸效應. |
| 代表著作 |
- C.-T. Liang et al., Experimental evidence for Coulomb charging effects in an open quantum dot at zero magnetic field, Phys. Rev. Lett. 81, 3507 (1998).
- C.-T. Liang et al., Fabrication and transport properties of clean long one-dimensional quantum wires formed in modulated doped GaAs/AlGaAs heterostructures, Appl. Phys. Lett. 75, 2975 (1999).
- C.-T. Liang et al., Spin-dependent transport in a clean one-dimensional channel, Phys. Rev. B 60, 10687 (1999).
- C.-T. Liang et al., Multilayered gated lateral quantum dot devices, Appl. Phys. Lett. 76, 1134 (2000).
- C.-T. Liang et al., Spin-dependent transport in a quasiballistic quantum wire, Phys. Rev. B 61, 9952 (2000).
- C.-T. Liang et al., Measurements of composite fermion conductivity dependence on carrier density, J. Phys.: Condens. Matter 16, 1095 (2004).
- Gil-Ho Kim, C.-T. Liang, C. F. Huang, J.T. Nicholls, D. A. Ritchie, P. S. Kim, C. H. Oh, J. R. Juang and Y. H. Chang, From localization to Landau quantization in a two-dimensional GaAs electron system containing self-assembled InAs quantum dots, Phys. Rev. B 69, 073311 (2004).
- C.-T. Liang et al., Gradual decrease of conductance of an adiabatic ballistic constriction below 2e 2 /h. Phys. Rev. B 70, 195324 (2004)
- C.-T. Liang et al., Al0.15Ga0.85N/GaN high electron mobility transistor structures grown on p-type Si substrates, Appl. Phys. Lett. 89, 132107 (2006).
- C.-T. Liang et al., Huge positive magnetoresistance in an InN film, Appl. Phys. Lett. 90, 172101 (2007)
- C.-T. Liang et al., Huge positive magnetoresistance in a gated AlGaAs/GaAs high electron mobility transistor structure at high temperatures, Appl. Phys. Lett. 92, 132111 (2008)
- C.-T. Liang et al., Electron heating and huge positive magnetoresistance in an AlGaAs/GaAs high electron mobility transistor structure at high temperatures, Appl. Phys. Lett. 92, 152117 (2008).
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